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Continuous miniaturization with improved performance has enabled the development of electronic devices. However, further shrinking of electronic circuits will push feature sizes (linewidths) firmly into the nanoscale. This can cause electronic devices built using current materials (silicon-based) and fabrication processes to not work as expected. Therefore, new materials or preparation technologies are needed for the further miniaturization of electron devices. Here, through theoretical simulation, we show that regular doping of a Cu-atom chain on a single-wall carbon nanotube (SWCNT) can be used to realize an atomic-scale current channel (Cu-atom-chain current channel) with a linewidth of approximately 0.246 nm. Moreover, the atomic-scale Cu-atom-chain current channel shows enhanced conductivity (lower power consumption) compared to a pristine SWCNT. Such a Cu-atom-chain current channel with an atomic-scale linewidth and its method of fabrication (regular doping) may be suitable for the preparation of nanoelectronic devices.

A Cu-atom-chain current channel with a width of approximately 0.246 nm on (5, 0) single-wall carbon nanotube