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Microjunction InAs/InAs 1−x Sb x  type-II superlattice-based long-wavelength infrared photodetectors with reduced dark current density were demonstrated. A double electron barrier design was employed to reduce both bulk and surface dark currents. The photodetectors exhibited low surface leakage after passivation with SiO 2 , allowing the use of very small size features without degradation of the dark current. Fabricating microjunction photodetectors (25 × 25 µm 2  diodes with 10 × 10 µm 2  microjunctions) in combination with the double electron barrier design results in a dark current density of 6.3 × 10 −6  A/cm 2  at 77 K. The device has an 8 µm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 µm-thick absorption region, which results in a specific detectivity value of 1.2 × 10 12  cm·Hz 1/2 /W.

Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors