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m -Plane GaN and InGaN films were grown on  m -plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the  m -plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick  m -plane In 0.12 Ga 0.88 N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown  m -plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the  m -plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films.

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO