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Elemental defects in transition metal oxides is an important and intriguingsubject that result in modifications in variety of physical propertiesincluding atomic and electronic structure, optical and magnetic properties.Understanding the formation of elemental vacancies and their influence ondifferent physical properties is essential in studying the complex oxide thinfilms. In this study, we investigated the physical properties of epitaxialSrRuO3 thin films by systematically manipulating cation and/or oxygenvacancies, via changing the oxygen partial pressure (P(O2)) during the pulsedlaser epitaxy (PLE) growth. Ru vacancies in the low-P(O2)-grown SrRuO3 thinfilms induce lattice expansion with the suppression of the ferromagnetic TCdown to ~120 K. Sr vacancies also disturb the ferromagnetic ordering, eventhough Sr is not a magnetic element. Our results indicate that both A and Bcation vacancies in an ABO3 perovskite can be systematically engineered viaPLE, and the structural, electrical, and magnetic properties can be tailoredaccordingly.

Tuning electromagnetic properties of SrRuO3 epitaxial thin films via atomic control of cation vacancies