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Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO x  film in a simple W/GeO x /W structure and understanding of switching mechanism through redox reaction in H 2 O 2 /sarcosine sensing (or changing Ge°/Ge 4+  oxidation states under external bias) have been reported for the first time. Oxidation states of Ge 0 /Ge 4+  are confirmed by both XPS and H 2 O 2  sensing of GeO x  membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10 6  cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO x  layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 10 6  cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeO x  membrane by sensing 1 nM H 2 O 2 , which is owing to the change of oxidation states from Ge 0  to Ge 4+  because of the enhanced O 2−  ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.

Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection