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Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu 2 ZnGeS 4 , deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, ρ ( T ), magnetoresistance and Hall effect in p-type Cu 2 ZnGeS 4  single crystals in pulsed magnetic fields up to 20 T. The dependence of ρ ( T ) in zero magnetic field is described by the Mott type of the variable-range hopping (VRH) charge transfer mechanism within a broad temperature interval of ~100–200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu 2 ZnGeS 4  conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of ρ( T ). This is typical of the Hall effect in the domain of the VRH charge transfer.

Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high-field magnetotransport