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We demonstrate the reduction of the inhomogeneous linewidth of the freeexcitons in atomically thin transition metal dichalcogenides (TMDCs)MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thickhBN. Encapsulation is shown to result in a significant reduction of the 10Kexcitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0\text{ meV}$ for p-WSe$_{2}$ and $\sim4.8 \text{ meV}$ for n-MoS$_{2}$.Evidence is obtained that the hBN environment effectively lowers the Fermilevel since the relative spectral weight shifts towards the neutral excitonemission in n-doped TMDCs and towards charged exciton emission in p-dopedTMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvableexciton and trion emission even after high power density excitation in contrastto non-encapsulated materials. Our findings suggest that encapsulation ofmechanically exfoliated few-monolayer TMDCs within nanometer thick hBNdramatically enhances optical quality, producing ultra-narrow linewidths thatapproach the homogeneous limit.

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit