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We report the experimental observation of variable range hopping conductionin focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topologicalinsulator (Bi2Se3). The value of the exponent in the hopping equation wasextracted as ~ 1/2 for different widths of nanowires, which is the proof of thepresence of Efros-Shklovskii hopping transport mechanism in a stronglydisordered system. High localization lengths (0.5nm, 20nm) were calculated forthe devices. A careful analysis of the temperature dependent fluctuationspresent in the magnetoresistance curves, using the standard UniversalConductance Fluctuation theory, indicates the presence of 2D topologicalsurface states. Also, the surface state contribution to the conductance wasfound very close to one conductance quantum. We believe that our experimentalfindings shed light on the understanding of quantum transport in disorderedtopological insulator based nanostructures.

Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires