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We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO 3−δ  epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature  T   D . The modulation in tensile strain and  T   D  tended to increase oxygen deficiency (δ) in NdNiO 3−δ  thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature ( T   MI ), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films