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Domain walls in ferromagnetic nanowires are potential building-blocks offuture technologies such as racetrack memories, in which data encoded in thedomain walls are transported using spin-polarised currents. However, thedevelopment of energy-efficient devices has been hampered by the high currentdensities needed to initiate domain wall motion. We show here that a remarkablereduction in the critical current density can be achieved for in-planemagnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks.The antiferromagnetic exchange coupling between the layers leads to simpleN\'{e}el wall structures, imaged using photoemission electron and Lorentztransmission electron microscopy, with a width of only $\sim 100$~nm. Themeasured critical current density to set these walls in motion, detected usingmagnetotransport measurements, is $1.0 \times 10^{11}$~Am$^{-2}$, almost anorder of magnitude lower than in a ferromagnetically coupled control sample.Theoretical modelling indicates that this is due to nonadiabatic driving ofanisotropically coupled walls, a mechanism that can be used to design efficientdomain-wall devices.

Very low critical current density for motion of coupled domain walls in synthetic ferrimagnet nanowires