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Selective doping of Ni 2+  in octahedral sites provided by nanocrystals embedded in glass-ceramics (GCs) is crucial to the enhancement of broadband near-infrared (NIR) emission. In this work, a NIR emission with a full-width-at-half-maximum (FWHM) of 288 nm is first reported from ZnGa 2 O 4 : Ni 2+  nano-spinels embedded GCs with excellent transparency. A comparison is made of the NIR luminescence properties of Ni 2+  doped GCs containing ZnGa 2 O 4 , germanium-substituted ZnGa 2 O 4  nano-spinels (Zn 1+ x  Ga 2−2 x  Ge  x  O 4 ), and Zn 2 GeO 4 /Li 2 Ge 4 O 9  composite nanocrystals that are free of Ga 3+ . The results show that ZnGa 2 O 4 : Ni 2+  GCs exhibit a significantly enhanced NIR emission. The incorporation of the nucleating agent TiO 2  is favored in terms of the increased luminescence intensity and prolonged lifetime. The possible causes for the enhancement effect are identified from the crystal structure/defects viewpoint. The newly developed GCs incorporate good reproducibility to allow for a tolerance of thermal treatment temperature and hence hold great potential of fiberization via the recently proposed “melt-in-tube” method. They can be considered as promising candidates for broadband fiber amplifiers.

scientific reports

Selective doping of Ni2+ in highly transparent glass-ceramics containing nano-spinels ZnGa2O4 and Zn1+x Ga2−2x Ge x O4 for broadband near-infrared fiber amplifiers