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In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO 2 /Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO 2 –Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO 2 -coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO 2  and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO 2 -metal interface is further studied by density functional theory calculations.

Interfacial chemical bonding-mediated ionic resistive switching