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Silicon crystallized in the usual cubic (diamond) lattice structure hasdominated the electronics industry for more than half a century. However, cubicsilicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgapsemiconductors that cannot emit light efficiently. Accordingly, achievingefficient light emission from group-IV materials has been a holy grail insilicon technology for decades and, despite tremendous efforts, it has remainedelusive. Here, we demonstrate efficient light emission from direct bandgaphexagonal Ge and SiGe alloys. We measure a subnanosecond,temperature-insensitive radiative recombination lifetime and observe a similaremission yield to direct bandgap III-V semiconductors. Moreover, we demonstratehow by controlling the composition of the hexagonal SiGe alloy, the emissionwavelength can be continuously tuned in a broad range, while preserving adirect bandgap. Our experimental findings are shown to be in excellentquantitative agreement with the ab initio theory. Hexagonal SiGe embodies anideal material system to fully unite electronic and optoelectronicfunctionalities on a single chip, opening the way towards novel device conceptsand information processing technologies.

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys