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Understanding the mechanism of high temperature (high Tc) superconductivityis a central problem in condensed matter physics. It is often speculated thathigh Tc superconductivity arises from a doped Mott insulator as described bythe Hubbard model. An exact solution of the Hubbard model, however, isextremely challenging due to the strong electron-electron correlation.Therefore, it is highly desirable to experimentally study a model Hubbardsystem in which the unconventional superconductivity can be continuously tunedby varying the Hubbard parameters. Here we report signatures of tunablesuperconductivity in ABC-trilayer graphene (TLG) / boron nitride (hBN) moir\'esuperlattice. Unlike "magic angle" twisted bilayer graphene, theoreticalcalculations show that under a vertical displacement field the ABC-TLG/hBNheterostructure features an isolated flat valence miniband associated with aHubbard model on a triangular superlattice. Upon applying such a displacementfield we find experimentally that the ABC-TLG/hBN superlattice displays Mottinsulating states below 20 Kelvin at 1/4 and 1/2 fillings, corresponding to 1and 2 holes per unit cell, respectively. Upon further cooling, signatures ofsuperconducting domes emerge below 1 kelvin for the electron- and hole-dopedsides of the 1/4 filling Mott state. The electronic behavior in the TLG/hBNsuperlattice is expected to depend sensitively on the interplay between theelectron-electron interaction and the miniband bandwidth, which can be tunedcontinuously with the displacement field D. By simply varying the D field, wedemonstrate transitions from the candidate superconductor to Mott insulator andmetallic phases. Our study shows that TLG/hBN heterostructures offer anattractive model system to explore rich correlated behavior emerging in thetunable triangular Hubbard model.

Signatures of Gate-Tunable Superconductivity in Trilayer Graphene/Boron Nitride Moir\'e Superlattice