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Surface states of three-dimensional topological insulators exhibit thephenomenon of spin-momentum locking, whereby the orientation of an electronspin is determined by its momentum. Probing the spin texture of these states isof critical importance for the realization of topological insulator devices,however the main technique available so far is the spin- and angle-resolvedphotoemission spectroscopy. Here we reveal a close link between the spintexture and a new kind of magneto-resistance, which depends on the relativeorientation of the current with respect to the magnetic field as well as thecrystallographic axes, and scales linearly with both the applied electric andmagnetic fields. This bilinear magneto-electric resistance can be used to mapthe spin texture of topological surface states by simple transportmeasurements. For a prototypical Bi2Se3 single layer, we can map both thein-plane and the out-of-plane components of the spin texture - the latterarising from hexagonal warping. Theoretical calculations suggest that thebilinear magneto-electric resistance originates from the conversion of anon-equilibrium spin current into a charge current under the application of theexternal magnetic field.

Bilinear magneto-electric resistance as a probe of three-dimensional spin texture in topological surface states