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In two-dimensional (2D) semiconducting transition metal dichalcogenides(TMDs), new electronic phenomena such as tunable band gaps and strongly boundexcitons and trions emerge from strong many-body effects, beyond spin-orbitcoupling- and lattice symmetry-induced spin and valley degrees of freedom.Combining single-layer (SL) TMDs with other 2D materials in van der Waalsheterostructures offers an intriguing means of controlling the electronicproperties through these many-body effects via engineered interlayerinteractions. Here, we employ micro-focused angle-resolved photoemissionspectroscopy (microARPES) and in-situ surface doping to manipulate theelectronic structure of SL WS$_2$ on hexagonal boron nitride (WS$_2$/h-BN).Upon electron doping, we observe an unexpected giant renormalization of the SLWS$_2$ valence band (VB) spin-orbit splitting from 430~meV to 660~meV, togetherwith a band gap reduction of at least 325~meV, attributed to the formation oftrionic quasiparticles. These findings suggest that the electronic, spintronicand excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, asthese are intimately linked to the quasiparticle dynamics of the materials.

Giant spin-splitting and gap renormalization driven by trions in single-layer WS$_2$/h-BN heterostructures