English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Twisted heterostructures of two-dimensional crystals offer almost unlimitedscope for the design of novel metamaterials. Here we demonstrate aroom-temperature ferroelectric semiconductor that is assembled using mono- orfew- layer MoS2. These van der Waals heterostructures feature broken inversionsymmetry, which, together with the asymmetry of atomic arrangement at theinterface of two 2D crystals, enables ferroelectric domains with alternatingout-of-plane polarisation arranged into a twist-controlled network. The lattercan be moved by applying out-of-plane electrical fields, as visualized in situusing channelling contrast electron microscopy. The interfacial charge transferfor the observed ferroelectric domains is quantified using Kelvin probe forcemicroscopy and agrees well with theoretical calculations. The movement ofdomain walls and their bending rigidity also agrees well with our modellingresults. Furthermore, we demonstrate proof-of-principle field-effecttransistors, where the channel resistance exhibits a pronounced hysteresisgoverned by pinning of ferroelectric domain walls. Our results show a potentialvenue towards room temperature electronic and optoelectronic semiconductordevices with built-in ferroelectric memory functions.

Interfacial ferroelectricity in marginally twisted 2D semiconductors