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In monolayer transition metal dichalcogenides, quantum emitters areassociated with localized strain that can be deterministically applied tocreate designer nano-arrays of single photon sources. Despite an overwhelmingempirical correlation with local strain, the nanoscale interplay betweenstrain, excitons, defects and local crystalline structure that gives rise tothese quantum emitters is poorly understood. Here, we combine room-temperaturenano-optical imaging and spectroscopy of excitons in nanobubbles of localizedstrain in monolayer WSe2 with atomistic structural models to elucidate howstrain induces nanoscale confinement potentials that give rise to highlylocalized exciton states in 2D semiconductors. Nano-optical imaging ofnanobubbles in low-defect monolayers reveal localized excitons on length scalesof approximately 10 nm at multiple sites along the periphery of individualnanobubbles, which is in stark contrast to predictions of continuum models ofstrain. These results agree with theoretical confinement potentials that areatomistically derived from measured topographies of existing nanobubbles. Ourresults provide one-of-a-kind experimental and theoretical insight of howstrain-induced confinement - without crystalline defects - can efficientlylocalize excitons on length scales commensurate with exciton size, providingkey nanoscale structure-property information for quantum emitter phenomena inmonolayer WSe2.

Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature