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Structural engineering of van der Waals heterostructures via stacking andtwisting has recently been used to create moir\'e superlattices, enabling therealization of new optical and electronic properties in solid-state systems. Inparticular, moir\'e lattices in twisted bilayers of transition metaldichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mottinsulating and superconducting states, and act as unique Hubbard systems whosecorrelated electronic states can be detected and manipulated optically.Structurally, these twisted heterostructures also feature atomic reconstructionand domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) oftypical moir\'e domains, the effects of atomic reconstruction on the electronicand excitonic properties of these heterostructures could not be investigatedsystematically and have often been ignored. Here, we use near-0$^o$ twist angleMoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directlyprobe excitonic properties of individual domains with far-field optics. We showthat this system features broken mirror/inversion symmetry, with the AB and BAdomains supporting interlayer excitons with out-of-plane (z) electric dipolemoments in opposite directions. The dipole orientation of ground-state$\Gamma$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields,while higher-energy K-K interlayer excitons (X$_{I,2}$) undergofield-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our studyreveals the profound impacts of crystal symmetry on TMD excitons and points tonew avenues for realizing topologically nontrivial systems, exoticmetasurfaces, collective excitonic phases, and quantum emitter arrays viadomain-pattern engineering.

Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers