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Spin-orbit coupling is a fundamental mechanism that connects the spin of acharge carrier with its momentum. Likewise, in the optical domain, a syntheticspin-orbit coupling is accessible, for instance, by engineering opticalanisotropies in photonic materials. Both, akin, yield the possibility to createdevices directly harnessing spin- and polarization as information carriers.Atomically thin layers of transition metal dichalcogenides provide a newmaterial platform which promises intrinsic spin-valley Hall features both forfree carriers, two-particle excitations (excitons), as well as for photons. Insuch materials, the spin of an exciton is closely linked to the high-symmetrypoint in reciprocal space it emerges from. Here, we demonstrate, that spin, andhence valley selective propagation is accessible in an atomically thin layer ofMoSe2, which is strongly coupled to a microcavity photon mode. We engineer awire-like device, where we can clearly trace the flow, and the helicity ofexciton-polaritons expanding along a channel. By exciting a coherentsuperposition of K and K- tagged polaritons, we observe valley selectiveexpansion of the polariton cloud without neither any applied external magneticfields nor coherent Rayleigh scattering. Unlike the valley Hall effect for TMDCexcitons, the observed optical valley Hall effect (OVHE) strikingly occurs on amacroscopic scale, and clearly reveals the potential for applications inspin-valley locked photonic devices.

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor