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The primary mechanism of operation of almost all transistors today relies onelectric-field effect in a semiconducting channel to tune its conductivity fromthe conducting 'on'-state to a non-conducting 'off'-state. As transistorscontinue to scale down to increase computational performance, physicallimitations from nanoscale field-effect operation begin to cause undesirablecurrent leakage that is detrimental to the continued advancement of computing.Using a fundamentally different mechanism of operation, we show that throughnanoscale strain engineering with thin films and ferroelectrics (FEs) thetransition metal dichalcogenide (TMDC) MoTe$_2$ can be reversibly switched withelectric-field induced strain between the 1T'-MoTe$_2$ (semimetallic) phase toa semiconducting MoTe$_2$ phase in a field effect transistor geometry. Thisalternative mechanism for transistor switching sidesteps all the static anddynamic power consumption problems in conventional field-effect transistors(FETs). Using strain, we achieve large non-volatile changes in channelconductivity (G$_{on}$/G$_{off}$~10$^7$ vs. G$_{on}$/G$_{off}$~0.04 in thecontrol device) at room temperature. Ferroelectric devices offer the potentialto reach sub-ns nonvolatile strain switching at the attojoule/bit level, havingimmediate applications in ultra-fast low-power non-volatile logic and memorywhile also transforming the landscape of computational architectures sinceconventional power, speed, and volatility considerations for microelectronicsmay no longer exist.

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor