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Organic semiconductors are usually not thought to show outstandingperformance in highly-integrated, sub 100 nm transistors. Consequently,single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductorsare the material of choice at these nanoscopic dimensions. Here, we show thatusing a novel vertical field-effect transistor design with a channel length ofonly 40 nm and a footprint of 2 x 80 x 80 nm$^2$, high electrical performancewith organic polymers can be realized when using electrolyte gating. Ourorganic transistors combine high on-state current densities of above 3MA/cm$^2$, on/off current modulation ratios of up to 108 and largetransconductances of up to 5000 S/m. Given the high on-state currents at yetlarge on/off ratios, our novel structures also show promise for use inartificial neural networks, where they could operate as memristive devices withsub 100 fJ energy usage.

Vertical, electrolyte-gated organic transistors: continuous operation in the MA/cm$^2$ regime and use as low-power artificial synapses