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The atomic thickness of two-dimensional (2D) materials provides a uniqueopportunity to control material properties and engineer new functionalities byelectrostatic doping. Electrostatic doping has been demonstrated to tune theelectrical and optical properties of 2D materials in a wide range, as well asto drive the electronic phase transitions. The recent discovery of atomicallythin magnetic insulators has opened up the prospect of electrical control ofmagnetism and new devices with unprecedented performance. Here we demonstratecontrol of the magnetic properties of monolayer and bilayer CrI3 byelectrostatic doping using a dual-gate field-effect device structure. Inmonolayer CrI3, doping significantly modifies the saturation magnetization,coercive force and Curie temperature, showing strengthened (weakened) magneticorder with hole (electron) doping. Remarkably, in bilayer CrI3 dopingdrastically changes the interlayer magnetic order, causing a transition from anantiferromagnetic ground state in the pristine form to a ferromagnetic groundstate above a critical electron density. The result reveals a stronglydoping-dependent interlayer exchange coupling, which enables robust switchingof magnetization in bilayer CrI3 by small gate voltages.

Controlling magnetism in 2D CrI3 by electrostatic doping