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Single photon emitters (SPEs) in solids have emerged as promising candidatesfor quantum photonic sensing, communications, and computing. Defects inhexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantumemission, but their large spectral variability and unknown local structuresignificantly challenge their technological utility. Here, we directlycorrelate hBN quantum emission with the material's local strain using acombination of photoluminescence (PL), cathodoluminescence (CL) and nano-beamelectron diffraction. Across 40 emitters and 15 samples, we observe zero phononlines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals thatmultiple defects and distinct defect species located within anoptically-diffraction-limited region can each contribute to the observed PLspectra. Local strain maps indicate that strain is not required to activate theemitters and is not solely responsible for the observed ZPL spectral range.Instead, four distinct defect classes are responsible for the observed emissionrange. One defect class has ZPLs near 615 nm with predominantly matched CL-PLresponses; it is not a strain-tuned version of another defect class with ZPLemission centered at 580 nm. A third defect class at 650 nm has lowvisible-frequency CL emission; and a fourth defect species centered at 705 nmhas a small, ~10 nm shift between its CL and PL peaks. All studied defects arestable upon both electron and optical irradiation. Our results provide animportant foundation for atomic-scale optical characterization of colorcenters, as well as a foundation for engineering defects with precise emissionproperties.

nature materials

Revealing multiple classes of stable quantum emitters in hexagonal boron  nitride with correlated cathodoluminescence, photoluminescence, and strain  mapping