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Moir\'e superlattices of two-dimensional van der Waals materials have emergedas a powerful platform for designing electronic band structures and discoveringemergent physical phenomena. A key concept involves the creation oflong-wavelength periodic potential and moir\'e bands in a crystal throughinterlayer hybridization when two materials are overlaid. Here we demonstrate anew approach based on spatially periodic dielectric screening to create moir\'ebands in a monolayer semiconductor. It relies on reduced dielectric screeningof the Coulomb interactions in monolayer semiconductors and their environmentaldielectric-dependent electronic band structure. We observe optical transitionsbetween moir\'e bands in monolayer WSe$_{2}$ when it is placed close to smallangle-misaligned graphene on hexagonal boron nitride. The moir\'e bands are aresult of long-range Coulomb interactions, strongly gate-tunable, and can haveversatile superlattice symmetries independent of the crystal lattice of thehost material. Our result also demonstrates that monolayer semiconductors aresensitive local dielectric sensors.

Creation of moir\'e bands in a monolayer semiconductor by spatially periodic dielectric screening