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Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavymetals and topological insulators (TIs) has great potential for ultra-low powermagnetoresistive random-access memory (MRAM). To be competitive withconventional spin-transfer-torque (STT) switching, a pure spin current sourcewith large spin Hall angle (${\theta}_{SH}$ > 1) and high electricalconductivity (${\sigma} > 10^5 {\Omega}^{-1}m^{-1}$) is required. Here, wedemonstrate such a pure spin current source: BiSb thin films with${\sigma}{\sim}2.5*10^5 {\Omega}^{-1}m^{-1}$, ${\theta}_{SH}{\sim}52$, and spinHall conductivity ${\sigma}_{SH}{\sim}1.3*10^7 {\hbar}/2e{\Omega}^{-1}m^{-1}$at room temperature. We show that BiSb thin films can generate a colossalspin-orbit field of 2770 Oe/(MA/cm$^2$) and a critical switching currentdensity as low as 1.5 MA/cm$^2$ in Bi$_{0.9}$Sb$_{0.1}$ / MnGa bi-layers. BiSbis the best candidate for the first industrial application of topologicalinsulators.

A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching