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Metal-to-insulator transitions (MIT) can be driven by a number of differentmechanisms, each resulting in a different type of insulator -- Change inchemical potential can induce a transition from a metal to a band insulator;strong correlations can drive a metal into a Mott insulator with an energy gap;an Anderson transition, on the other hand, due to disorder leads to a localizedinsulator without a gap in the spectrum. Here we report the discovery of analternative route for MIT driven by the creation of a network of narrowchannels. Transport data on Pt substituted for Ti in TiSe$_2$ shows a dramaticincrease of resistivity by five orders of magnitude for few % of Ptsubstitution, with a power-law dependence of the temperature-dependentresistivity $\rho(T)$. Our scanning tunneling microscopy data show that Ptinduces an irregular network of nanometer-thick domain walls (DWs) of chargedensity wave (CDW) order, which pull charge carriers out of the bulk and intothe DWs. While the CDW domains are gapped, the charges confined to the narrowDWs interact strongly, with pseudogap-like suppression in the local density ofstates, even when they were weakly interacting in the bulk, and scatter at theDW network interconnects thereby generating the highly resistive state.Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behaviorcorroborating the spatial coexistence of gapped domains and narrow domain wallswith excess charge carriers.

Metal-to-insulator transition in Pt-doped TiSe$_2$ driven by emergent network of narrow transport channels