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We study the effect of strain on the physical properties of the nitrogenantisite-vacancy pair in hexagonal boron nitride ($h$-BN), a color center thatmay be employed as a quantum bit in a two-dimensional material. With grouptheory and ab-initio analysis we show that strong electron-phonon couplingplays a key role in the optical activation of this color center. We find agiant shift on the zero-phonon-line (ZPL) emission of the nitrogenantisite-vacancy pair defect upon applying strain that is typical of $h$-BNsamples. Our results provide a plausible explanation for the experimentalobservation of quantum emitters with similar optical properties but widelyscattered ZPL wavelengths and the experimentally observed dependence of the ZPLon the strain.

Giant shift upon strain on the fluorescence spectrum of V$_{\rm N}$N$_{\rm B}$ color centers in $h$-BN