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We identify the dominant source for low-frequency spin qubit splitting noise in a highly isotopically-purified silicon device with an embedded nanomagnet and a spin echo decay time T echo 2 = 128 μs. The power spectral density (PSD) of the charge noise explains both, the clear transition from a 1/fto a 1/f-dependence of the splitting noise PSD as well as the experimental observation of a decreasing time-ensemble spin dephasing time, from T 2 20 μs, with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few Ge nuclei overlapping with the quantum dot in the barrier do not limit T 2, likely because their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field are the key to further improve the qubit fidelity in isotopically purified Si/SiGe.

Author Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe