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Being able to control the neutral excitonic flux is a mandatory step for thedevelopment of future room-temperature two-dimensional excitonic devices.Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) withextremely robust and mobile excitons are highly attractive in this regard.However, generating an efficient and controlled exciton transport over longdistances is a very challenging task. Here we demonstrate that an atomicallysharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms theisotropic exciton diffusion into a unidirectional excitonic flow through thejunction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and amodified exciton transfer model, we show a discontinuity of the exciton densitydistribution on each side of the interface. We introduce the concept of excitonKapitza resistance, by analogy with the interfacial thermal resistance referredto as Kapitza resistance. By comparing different heterostructures with orwithout top hexagonal boron nitride (hBN) layer, we deduce that the transportproperties can be controlled, over distances far greater than the junctionwidth, by the exciton density through near-field engineering and/or laser powerdensity. This work provides a new approach for controlling the neutral excitonflow, which is key toward the conception of excitonic devices.

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction