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Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnetsseparated by a nonmagnetic insulating layer are key building blocks inspintronics for magnetic sensors and memory. A radically different approach ofusing atomically-thin van der Waals (vdW) materials in MTJs is expected toboost their figure of merit, the tunneling magnetoresistance (TMR), whilerelaxing the lattice-matching requirements from the epitaxial growth andsupporting high-quality integration of dissimilar materials withatomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulatingspacer, this large TMR is realized with a vdW semiconductor GaSe. Integrationof two-dimensional ferromagnets in semiconductor-based vdW junctions offersgate-tunability, bias dependence, magnetic proximity effects, andspin-dependent optical-selection rules. We demonstrate that not just themagnitude, but also the TMR sign is tuned by the applied bias or thesemiconductor thickness, enabling modulation of highly spin-polarized carriersin vdW semiconductors.

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions