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The lack of dense random access memory is one of the main bottlenecks for thecreation of a digital superconducting computer. In this work we studyexperimentally vortex-based superconducting memory cells. Three main resultsare obtained. First, we test scalability and demonstrate that the cells can bestraightforwardly miniaturized to submicron sizes. Second, we emphasize theimportance of conscious geometrical engineering. In the studied devices weintroduce an asymmetric easy track for vortex motion and show that it enables acontrollable manipulation of vortex states. Finally, we perform a detailedanalysis of word and bit line operation of a 1x1 {\mu}m2 cell. High-endurance,nonvolatile operation at zero magnetic field is reported. Remarkably, weobserve that the combined word and bit line threshold current is significantlyreduced compared to the bare word-line operation. This could greatly improvethe selectivity of individual cell addressing in a multibit RAM. The achievedone square micron area is an important milestone and a significant step forwardtowards creation of a dense cryogenic memory.

Word and bit line operation of a 1x1 {\mu}m2 superconducting vortex-based memory