English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A photonic transistor that can switch or amplify an optical signal with asingle gate photon requires strong non-linear interaction at the single-photonlevel. Circuit quantum electrodynamics provides great flexibility to generatesuch an interaction, and thus could serve as an effective platform to realize ahigh-performance single-photon transistor. Here we demonstrate such a photonictransistor in the microwave regime. Our device consists of two microwavecavities dispersively coupled to a superconducting qubit. A single gate photonimprints a phase shift on the qubit state through one cavity, and furthershifts the resonance frequency of the other cavity. In this way, we realize again of the transistor up to 53.4 dB, with an extinction ratio better than 20dB. Our device outperforms previous devices in the optical regime by severalorders in terms of optical gain, which indicates a great potential forapplication in the field of microwave quantum photonics and quantum informationprocessing.

An ultra-high gain single-photon transistor in the microwave regime