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Electrical manipulation of spins is essential to design state-of-the-artspintronic devices and commonly relies on the spin current injected from asecond heavy-metal material. The fact that chiral antiferromagnets produce spincurrent inspires us to explore the magnetization switching of chiral spinsusing self-generated spin torque. Here, we demonstrate the electric switchingof noncollinear antiferromagnetic state in Mn3Sn by observing a crossover fromconventional spin-orbit torque to the self-generated spin torque whenincreasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spincurrent injection from the Ta layer can be controlled and even blocked byvarying the MgO thickness, but the switching sustains even at a large MgOthickness. Furthermore, the switching polarity reverses when the MgO thicknessexceeds around 3 nm, which cannot be explained by the spin-orbit torquescenario due to spin current injection from the Ta layer. Evidentcurrent-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers,where external injection of spin Hall current to Mn3Sn is negligible. Theinter-grain spin-transfer torque induced by spin-polarized current explains theexperimental observations. Our findings provide an alternative pathway forelectrical manipulation of non-collinear antiferromagnetic state withoutresorting to the conventional bilayer structure.

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current