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A small percentage of dopant atoms can completely change the physicalproperties of the host material. For example, chemical doping controls theelectronic transport behavior of semiconductors and gives rise to a wide rangeof emergent electric and magnetic phenomena in oxides. Imaging of individualdopant atoms in lightly doped systems, however, remains a major challenge,hindering characterization of the site-specific effects and local dopantconcentrations that determine the atomic-scale physics. Here, we applyatom-probe tomography (APT) to resolve individual Ti atoms in the narrow bandgap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our3D imaging measures the Ti concentration at the unit cell level, providingquantitative information about the dopant distribution within the ErMnO3crystal lattice. High-resolution APT maps reveal the 3D lattice position ofindividual Ti atoms, showing that they are located within the Mn layers with nosigns of clustering or other chemical inhomogeneities. The 3D atomic-scalevisualization of individual dopant atoms provides new opportunities for thestudy of local structure-property relations in complex oxides, representing animportant step toward controlling dopant-driven quantum phenomena innext-generation oxide electronics.

Atomic-scale 3D imaging of individual dopant atoms in a complex oxide