English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Spin defects in hexagonal boron nitride (hBN) are promising quantum systemsfor the design of flexible two-dimensional quantum sensing platforms. Here werely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B toinvestigate the isotope-dependent properties of a spin defect featuring abroadband photoluminescence signal in the near infrared. By analyzing thehyperfine structure of the spin defect while changing the boron isotope, wefirst unambiguously confirm that it corresponds to the negatively-chargedboron-vacancy center (${\rm V}_{\rm B}^-$). We then show that its spincoherence properties are slightly improved in $^{10}$B-enriched samples. Thisis supported by numerical simulations employing cluster correlation expansionmethods, which reveal the importance of the hyperfine Fermi contact term forcalculating the coherence time of point defects in hBN. Using cross-relaxationspectroscopy, we finally identify dark electron spin impurities as anadditional source of decoherence. This work provides new insights into theproperties of ${\rm V}_{\rm B}^-$ spin defects, which are valuable for thefuture development of hBN-based quantum sensing foils.

Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride