English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Light-emitting electronic devices are ubiquitous in key areas of currenttechnology, such as data communications, solid-state lighting, displays, andoptical interconnects. Controlling the spectrum of the emitted lightelectrically, by simply acting on the device bias conditions, is an importantgoal with potential technological repercussions. However, identifying amaterial platform enabling broad electrical tuning of the spectrum ofelectroluminescent devices remains challenging. Here, we propose light-emittingfield-effect transistors based on van der Waals interfaces of atomically thinsemiconductors as a promising class of devices to achieve this goal. Wedemonstrate that large spectral changes in room-temperature electroluminescencecan be controlled both at the device assembly stage -- by suitably selectingthe material forming the interfaces -- and on-chip, by changing the bias tomodify the device operation point. Even though the precise relation betweendevice bias and kinetics of the radiative transitions remains to be understood,our experiments show that the physical mechanism responsible for light emissionis robust, making these devices compatible with simple large areas deviceproduction methods.

Light sources with bias tunable spectrum based on van der Waals interface transistors