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The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantummaterials has led to heterostructures that integrate diverse quantumfunctionalities such as topological phases, magnetism, and superconductivity.In this context, the epitaxial synthesis of vdW heterostructures withwell-controlled interfaces is an attractive route towards wafer-scale platformsfor systematically exploring fundamental properties and fashioningproof-of-concept devices. Here, we use molecular beam epitaxy to synthesize avdW heterostructure that interfaces two material systems of contemporaryinterest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). Wefind that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c.thick CrTe2), the anomalous Hall effect has characteristics that may arise fromreal-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), wedemonstrate current-driven magnetization switching in a full vdW topologicalsemimetal/2D ferromagnet heterostructure device.

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics