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Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility ( μ  FE ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100 cm 2 V −1 s −1 ). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In 2 O 3  (In 2 O 3 :H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In 2 O 3 :H TFTs fabricated at 300 °C exhibit superior switching properties with  µ  FE  = 139.2 cm 2 V −1 s −1 , a subthreshold swing of 0.19 Vdec −1 , and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In 2 O 3 :H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In 2 O 3 :H TFTs have a great potential for use in future transparent or flexible electronics applications.

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors