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Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density ( J  D ) and noise current ( i  n ). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of  J  D  for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of  J  D . By increasing this offset we realized a PPD with ultralow  J  D  and  i  n  of 5 × 10 −8  mA cm −2  and 2 × 10 −14  A Hz −1/2 , respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.

Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation