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Single photon emitters in atomically-thin semiconductors can bedeterministically positioned using strain induced by underlyingnano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-indexgallium phosphide dielectric nano-antennas providing both optical enhancementand monolayer deformation. For single photon emitters formed on suchnano-antennas, we find very low (femto-Joule) saturation pulse energies and upto 10$^4$ times brighter photoluminescence than in WSe$_2$ placed onlow-refractive-index SiO$_2$ pillars. We show that the key to theseobservations is the increase on average by a factor of 5 in the quantumefficiency of the emitters coupled to the nano-antennas. This further allowedus to gain new insights into their photoluminescence dynamics, revealing theroles of the dark exciton reservoir and Auger processes. We also find that thecoherence time of such emitters is limited by intrinsic dephasing processes.Our work establishes dielectric nano-antennas as a platform for high-efficiencyquantum light generation in monolayer semiconductors.

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas