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Higher order topological insulators (HOTIs) are a new class of topologicalmaterials which host protected states at the corners or hinges of a crystal.HOTIs provide an intriguing alternative platform for helical and chiral edgestates and Majorana modes, but there are very few known materials in thisclass. Recent studies have proposed Bi as a potential HOTI, however, itstopological classification is not yet well accepted. In this work, we show thatthe (110) facets of Bi and BiSb alloys can be used to unequivocally establishthe topology of these systems. Bi and Bi$_{0.92}$Sb$_{0.08}$ (110) films weregrown on silicon substrates using molecular beam epitaxy and studied byscanning tunneling spectroscopy. The surfaces manifest rectangular islandswhich show localized hinge states on three out of the four edges, consistentwith the theory for the HOTI phase. This establishes Bi andBi$_{0.92}$Sb$_{0.08}$ as HOTIs, and raises questions about the topologicalclassification of the full family of Bi$_{x}$Sb$_{1-x}$ alloys.

Evidence for Higher order topology in Bi and Bi$_{0.92}$Sb$_{0.08}$