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There is accelerating interest in developing memory devices usingantiferromagnetic (AFM) materials, motivated by the possibility forelectrically controlling AFM order via spin-orbit torques, and its read-out viamagnetoresistive effects. Recent studies have shown, however, that high currentdensities create non-magnetic contributions to resistive switching signals inAFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here weintroduce an experimental protocol to unambiguously distinguish current-inducedmagnetic and nonmagnetic switching signals in AFM/HM structures, anddemonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device isconstructed, with an IrMn$_3$ pillar placed on one cross. The differentialvoltage is measured between the two crosses with and without IrMn$_3$ aftereach switching attempt. For a wide range of current densities, reversibleswitching is observed only when write currents pass through the cross with theIrMn$_3$ pillar, eliminating any possibility of non-magnetic switchingartifacts. Micromagnetic simulations support our findings, indicating a complexdomain-mediated switching process.

Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements