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Highly monodisperse colloidal InAs quantum dots (QDs) with superior optoelectronic properties are promising candidates for various applications, including infrared photodetectors and photovoltaics. Recently, a synthetic process involving continuous injection has been introduced to synthesize uniformly sized InAs QDs. Still, synthetic efforts to increase the particle size of over 5 nm often suffer from growth suppression. Secondary nucleation or interparticle ripening during the growth accompanies the inhomogeneity in size as well. In this study, we propose a growth model for the continuous synthetic processing of colloidal InAs QDs based on molecular diffusion. The experimentally validated model demonstrates how precursor solution injection reduces monomer flux, limiting particle growth during synthesis. As predicted by our model, we control the diffusion dynamics by tuning reaction volume, precursor concentration, and injection rate of precursor. Through diffusion-dynamics-control in the continuous process, we synthesize the InAs QDs with a size over 9.0-nm (1S max  of 1600 nm) with a narrow size distribution (12.2%). Diffusion-dynamics-controlled synthesis presented in this study effectively manages the monomer flux and thus overcome monomer-reactivity-originating size limit of nanocrystal growth in solution.

Diffusion dynamics controlled colloidal synthesis of highly monodisperse InAs nanocrystals