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The 4f-electron delocalization plays a key role in the low-temperatureproperties of rare-earth metals and intermetallics, including heavy fermionsand mix-valent compounds, and is normally realized by the many-body Kondocoupling between 4f and conduction electrons. Due to the large onsite Coulombrepulsion of 4f electrons, the bandwidth-control Mott-type delocalization,commonly observed in d-electron systems, is difficult in 4f-electron systemsand remains elusive in spectroscopic experiments. Here we demonstrate that thebandwidth-control orbital-selective delocalization of 4f electrons can berealized in epitaxial Ce films by thermal annealing, which results in ametastable surface phase with a reduced layer spacing. The resultingquasiparticle bands exhibit large dispersion with exclusive 4f character nearE_F and extend reasonably far below the Fermi energy, which can be explainedfrom the Mott physics. The experimental quasiparticle dispersion agreessurprisingly well with density-functional theory calculation and also exhibitsunusual temperature dependence, which could be a direct consequence of thedelicate interplay between the bandwidth-control Mott physics and thecoexisting Kondo hybridization. Our work therefore opens up the opportunity tostudy the interaction between two well-known localization-delocalizationmechanisms in correlation physics, i.e., Kondo vs Mott, which can be importantfor a fundamental understanding of 4f-electron systems.

Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films