English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Low-loss photonic integrated circuits (PIC) and microresonators have enablednovel applications ranging from narrow-linewidth lasers, microwave photonics,to chip-scale optical frequency combs and quantum frequency conversion. Totranslate these results into a widespread technology, attaining ultralowoptical losses with established foundry manufacturing is critical. Recentadvances in fabrication of integrated Si3N4 photonics have shown thatultralow-loss, dispersion-engineered microresonators can be attained atdie-level throughput. For emerging nonlinear applications such as integratedtravelling-wave parametric amplifiers and mode-locked lasers, PICs of lengthscales of up to a meter are required, placing stringent demands on yield andperformance that have not been met with current fabrication techniques. Here weovercome these challenges and demonstrate a fabrication technology which meetsall these requirements on wafer-level yield, performance and length scale.Photonic microresonators with a mean Q factor exceeding 30 million,corresponding to a linear propagation loss of 1.0 dB/m, are obtained over full4-inch wafers, as determined from a statistical analysis of tens of thousandsof optical resonances and cavity ringdown with 19 ns photon storage time. Theprocess operates over large areas with high yield, enabling 1-meter-long spiralwaveguides with 2.4 dB/m loss in dies of only 5x5 mm size. Using a modulationresponse measurement self-calibrated via the Kerr nonlinearity, we reveal that,strikingly, the intrinsic absorption-limited Q factor of our Si3N4microresonators exceeds a billion. Transferring the present Si3N4 photonicstechnology to standard commercial foundries, and merging it with siliconphotonics using heterogeneous integration technology, will significantly expandthe scope of today's integrated photonics and seed new applications.

High-yield wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits