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High Q optical resonators are a key component for ultra-narrow linewidthlasers, frequency stabilization, precision spectroscopy and quantumapplications. Integration of these resonators in a photonic waveguidewafer-scale platform is key to reducing their cost, size and power as well assensitivity to environmental disturbances. However, to date, the intrinsic Q ofintegrated all-waveguide resonators has been relegated to below 150 Million.Here, we report an all-waveguide Si3N4 resonator with an intrinsic Q of 422Million and a 3.4 Billion absorption loss limited Q. The resonator has a 453kHz intrinsic linewidth and 906 kHz loaded linewidth, with a finesse of 3005.The corresponding linear loss of 0.060 dB/m is the lowest reported to date foran all-waveguide design with deposited upper cladding oxide. These are thehighest intrinsic and absorption loss limited Q factors and lowest linewidthreported to date for a photonic integrated all-waveguide resonator. This levelof performance is achieved through a careful reduction of scattering andabsorption loss components. We quantify, simulate and measure the various losscontributions including scattering and absorption including surface-statedangling bonds that we believe are responsible in part for absorption. Inaddition to the ultra-high Q and narrow linewidth, the resonator has a largeoptical mode area and volume, both critical for ultra-low laser linewidths andultra-stable, ultra-low frequency noise reference cavities. These resultsdemonstrate the performance of bulk optic and etched resonators can be realizedin a photonic integrated solution, paving the way towards photonic integrationcompatible Billion Q cavities for precision scientific systems and applicationssuch as nonlinear optics, atomic clocks, quantum photonics and high-capacityfiber communications systems on-chip.

422 Million Q Planar Integrated All-Waveguide Resonator with a 3.4 Billion Absorption Limited Q and Sub-MHz Linewidth