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The challenge of next generation datacom and telecom communication is toincrease the available bandwidth while reducing the size, cost and powerconsumption of photonic integrated circuits. Silicon (Si) photonics has emergedas a viable solution to reach these objectives. Graphene, a single-atom thicklayer of carbon5, has been recently proposed to be integrated with Si photonicsbecause of its very high mobility, fast carrier dynamics and ultra-broadbandoptical properties. Here, we focus on graphene photodetectors for high speeddatacom and telecom applications. High speed graphene photodetectors have beendemonstrated so far, however the most are based on the photo-bolometric (PB) orphoto-conductive (PC) effect. These devices are characterized by large darkcurrent, in the order of milli-Amperes , which is an impairment inphoto-receivers design, Photo-thermo-electric (PTE) effect has been identifiedas an alternative phenomenon for light detection. The main advantages ofPTE-based photodetectors are the optical power to voltage conversion, zero-biasoperation and ultra-fast response. Graphene PTE-based photodetectors have beenreported in literature, however high-speed optical signal detection has notbeen shown. Here, we report on an optimized graphene PTE-based photodetectorwith flat frequency response up to 65 GHz. Thanks to the optimized design wedemonstrate a system test leading to direct detection of 105 Gbit s-1non-return to zero (NRZ) and 120 Gbit s-1 4-level pulse amplitude modulation(PAM) optical signals

Photo Thermal Effect Graphene Detector Featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 Direct Detection