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Phase change memory (PCM) is a rapidly growing technology that not onlyoffers advancements in storage-class memories but also enables in-memory datastorage and processing towards overcoming the von Neumann bottleneck. In PCMs,the primary mechanism for data storage is thermal excitation. However, there isa limited body of research regarding the thermal properties of PCMs at lengthscales close to the memory cell dimension and, thus, the impact of interfaceson PCM operation is unknown. Our work presents a new paradigm to manage thermaltransport in memory cells by manipulating the interfacial thermal resistancebetween the phase change unit and the electrodes without incorporatingadditional insulating layers. Experimental measurements show a substantialchange in thermal boundary resistance as GST transitions from onecrystallographic structure (cubic) to another (hexagonal) and as the thicknessof tungsten contacts is reduced from five to two nanometers. Simulations revealthat interfacial resistance between the phase change unit and its adjacentlayer can reduce the reset current for 20 and 120 nm diameter devices by up to~40% and ~50%, respectively. The resultant phase-dependent and geometriceffects on thermal boundary resistance dictate that the effective thermalconductivity of the phase change unit can be reduced by a factor of four,presenting a new opportunity to reduce operating currents in PCMs.

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices