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Semiconductor spin qubits have recently seen major advances in coherence timeand control fidelities, leading to a single-qubit performance that is on parwith other leading qubit platforms. Most of this progress is based on microwavecontrol of single spins in devices made of isotopically purified silicon. Forcontrolling spins, the exchange interaction is an additional key ingredientwhich poses new challenges for high-fidelity control. Here, we demonstrateexchange-based single-qubit gates of two-electron spin qubits in GaAs doublequantum dots. Using careful pulse optimization and closed-loop tuning, weachieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and aleakage rate of $0.13\%$ out of the computational subspace. These results opennew perspectives for microwave-free control of singlet-triplet qubits in GaAsand other materials.

Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage